1. Responsible for improving the quality of silicon carbide products; 2. Responsible for developing and optimizing the silicon carbide process route; 3. Responsible for research and analysis of various defects in silicon carbide, and proposing effective solutions

1. Have strong ability in experimental data analysis and document writing, as well as data statistical analysis and summarizing rules; 2. Bachelor's degree or above, with at least three years of relevant work experience in silicon carbide substrate cutting, grinding, polishing, cleaning, and testing.

1. Having basic theoretical knowledge of crystal growth, able to use theoretical, simulation, and experimental methods to analyze and study related issues in crystal growth; 2. From the perspective of technology and materials, analyze the changes in various physical quantities of crystal growth, and optimize and improve the crystal growth process; 3. Responsible for or participate in long crystal improvement projects, design and develop new thermal field structures, etc.

1. Bachelor's degree or above in materials science, materials science and engineering, materials physics, or similar related majors; 2. Strong ability to learn and analyze problems, with a certain level of pressure resistance; 3. Ability in statistical investigation and analysis, adept at discovering, finding, and solving problems; 4. Ability to process data using data processing software such as Excel and Origin.